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| CBCX68 CBCX69 SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CBCX68, CBCX69 types are complementary silicon transistor manufactured by epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability. SOT-89 CASE MAXIMUM RATINGS (TA=25C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current-Peak Base Current Base Current Peak Power Dissipation Operating and Storage Junction Temperature Thermal Temperature SYMBOL VCES VCEO VEBO IC ICM IB IBM PD TJ,Tstg JA 25 20 5.0 1.0 2.0 100 200 1.2 -65 to +150 104 UNITS V V V A A mA mA W C C/W ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=25V ICBO VCB=25V, TA=150C IEBO VEB=5.0V BVCBO IC=10A 25 BVCEO IC=10mA 20 BVEBO IE=1.0A 5.0 VCE(SAT) IC=1.0A, IB=100mA VBE(ON) VCE=10V,IC=5.0mA 0.6 VBE(ON) VCE=1.0V, IC=1.0A hFE VCE=10V,IC=500mA 50 hFE VCE=1.0,IC=500mA 85 hFE VCE=1.0V, IC=1.0A 60 fT VCE=5.0V,IC=10mA, f=20MHz 65 MAX 100 10 0.5 1.0 375 UNITS nA A A V V V V V V MHz R4 ( 19-December 2001) Central TM Semiconductor Corp. CBCX68 CBCX69 SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS MECHANICAL OUTLINE - SOT-89 A B E F G H 1 C J L M 2 K R3 3 BOTTOM VIEW LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE R4 ( 19-December 2001) |
Price & Availability of CBCX69
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